revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 1 of 7 rfmd + triquint = qorvo rfpa5542 wifi integrated pa module 4.9ghz to 5.925ghz the rfpa5542 is a three-stage power amplifier (pa) designed for 802.11a/n/ac applications. the integrated input and output 50 ? match greatly reduces the layout area, bill of materials and manufacturability cost in the customer application. the pa is optimized to minimize the required external components to maintain linear performance. the rfpa5542 is manufactured on an advanced ingap heterojunction bipolar transistor (hbt) process and is capable of achieving linear powers up to 23dbm with an evm <1.8% while maintaining excellent power added efficiency. the device is provided in a 4.0mm x 4.0mm x 0.90mm package that meets or exceeds the power requirements of ieee802.11a/n/ac wifi rf systems . functional block diagram ordering information rfpa5542sb standard 5-piece sample bag rfpa5542sq standard 25-piece sample bag rfpa5542sr standard 100-piece reel rfpa5542tr13 standard 2500-piece reel RFPA5542PCK-410 fully assembled evaluation board package: qfn, 20-pin, 4.0mm x 4.0mm x 0.90mm features p out = 23dbm, 5v, 11ac, 80mhz mcs9 at 1.8% evm p out = 25dbm, 5v, 11n, 20/40mhz mcs7 at 3% evm typical gain = 33db high pae required external components minimized integrated regulator input and output matched to 50 ? integrated power detector applications customer premise equipment (cpe) wireless access points, gateways routers set-top box applications picocell/femtocell rfpa5542
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 2of 7 rfmd + triquint = qorvo absolute maximum ratings parameter rating unit dc supply voltage -0.5 to +6 v dc dc supply current 1000 ma operating case temperature -40 to +85 oc storage temperature -40 to +150 oc maximum tx input power into 50 ? load for 11a/n/ac (no damage). *r1=0 ? +10 dbm maximum tx input power into 10:1 vswr load for 11a/n/ac (no dama g e ) . *r1=15 ? +15 dbm moisture sensitivity level (260c jedec j-std-020) msl2 *note: for r1 placement, please refer to the applications schematic. caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision), halogen free per iec 61249-2-21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. this is an ingap pa designed for high duty cycle applications with tj>30oc over ambient. nominal operating parameters parameter specification unit condition min typ max compliance 802.11a/n/ac operatin g frequenc y 5.180 5.925 ghz extended operatin g frequenc y 4.900 5.180 ghz power su pp l y v cc 4.75 5.00 5.25 v pa enable - hi g h 1.7 3.0 3.3 v pa enable - low 0 0.5 v 5v transmit performance t= +25oc, v cc =5.0v, v paen = 3.0v, unless otherwise noted 11ac 80mhz out p ut powe r 22 23 dbm mcs9 256qam 11ac 80mhz devm 1.5 1.8 % -36.5 -35 db 11ac 160mhz out p ut powe r 21 22 dbm mcs9 256qam 11ac 160mhz devm 1.5 1.8 % -36.5 -35 db 11n 20/40mhz out p ut powe r 23.5 25 dbm mcs7 64qam 11n 20/40mhz devm 2.5 3 % -32.0 -30.5 db gain 31 33 db gain variation over tem p -2.5 +2.5 db over o p eratin g fre q uenc y band margin to spectral mask 3 db p out =23dbm; mcs0 160mhz 3 db p out =25dbm; mcs0 80mhz 3 db p out =26dbm; mcs0 40mhz 3 db p out =27dbm; mcs0 20mhz operating current 285 310 ma p out =23dbm 385 430 ma p out =27dbm quiescent current 150 165 ma rf=off, t= +25oc, v cc =5.0v, v paen = 3.0v, pa enable current 1 5 ua pa_en hi g h leaka g e current 0.2 1 ua rf off; v cc =5.0v, v paen = 0v rfpa5542
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 3of 7 rfpa5542 rfmd + triquint = qorvo parameter specification unit condition min typ max 5v transmit performance t= +25oc, v cc =5.0v, v paen = 3.0v, unless otherwise noted second harmonic -45 -40 dbm/mhz p out = 27dbm, measured with a standard ieee802.11a 6 mbps waveform third harmonic -50 -45 dbm/mhz p out = 27dbm, measured with a standard ieee802.11a 6 mbps waveform oob gain -5 db gain @ 3.3-3.8ghz 7 db gain @ 7.0ghz input return loss 12 db output return loss 12 db power detector range 0.25 v rf=off 0.55 p out = 22dbm 0.65 v p out = 23dbm 0.85 v p out = 27dbm general specifications stabilit y output vswr 4:1 cw signal. no s purious above -41.25dbm/mhz for non-harmonic related si g nals. out p ut power ran g e 0 27 dbm out p ut p1db 33 dbm cw si g nal ramp on/off time 200 ns 10-90% / 90-10% of g ain thermal resistance 25 c/w esd hbm 1500 v eia/jesd22-114a; all pins esd cdm 500 v jesd22-c101c; all pins
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 4of 7 rfpa5542 rfmd + triquint = qorvo rfpa5542 applications schematic
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 5of 7 rfpa5542 rfmd + triquint = qorvo pin out
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 6of 7 rfpa5542 rfmd + triquint = qorvo package drawing pcb patterns
revision ds 20150515 disclaimer: subject to change without notice ? 2015 rf micro devices, inc. www.rfmd.com / www.qorvo.com 7of 7 rfpa5542 rfmd + triquint = qorvo pin names and descriptions pin name description 1 nc not connected internally. it may be left floating or connected to ground. 2 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 3 rfin rf input, internally matched to 50 ? and dc shorted. external dc blocking capacitor required. 4 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 5 pa_en pa enable pin. apply <0.4v dc . apply 1.5v dc to v cc to enable pa. 6 nc not connected internally. it may be left floating or connected to ground. 7 nc not connected internally. it may be left floating or connected to ground. 8 nc not connected internally. it may be left floating or connected to ground. 9 nc not connected internally. it may be left floating or connected to ground. 10 pdet power detector. provides an output voltage proportional to the rf output power level. 11 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 12 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 13 rfout rf output, internally matched to 50 ? and dc shorted. external dc blocking capacitor required. 14 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 15 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 16 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 17 gnd ground connection. this pin is not connected internally and can be le ft floating or connected to ground. 18 vcc3 third stage supply voltage 19 vcc2 second stage supply voltage. 20 vcc1 first stage supply voltage. pkg base gnd ground connection. the back side of the package shoul d be connected to the ground plan though as short of a connection as possible. pcb vi as under the device are recommended.
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